electron transition meaning in Chinese
电子跃迁
电子转变, 电子过渡
Examples
- Their molecule structures have strong electron conjugated systems and electron transition between organic ligands and center metal atoms , which result an enhancement of their nonlinear polarizabilities
它的结构中含有较强的电子共轭体系，并且有机配体与中心原子间的电子转移，大大提高了其非线性极化率。 - Excited with 228nm , the emission bands centered at about 365nm and 460nm originate from the electron transitions of 1d2 - 1s0 and 3d - 1s0 in ag + respectively , and the emission band at 400nm results from the surface plasma resonance of the silver nanoparticles , which aggregated near the surface of the films
在228nm光激发下，复合膜中ag ~ +的电子的~ 1d _ 2 ~ 1s _ 0跃迁和~ 3d ~ 1s _ 0跃迁分别在365和460nm附近发光，聚集在复合膜表面的纳米银粒子的表面等离激元共振导致了400nm附近的发光。 - There are distinct changes about shifts or intensity in bulk plasmon , surface plasmon , and interband electron transitions losses as a result of oxidation of specimens , and adsorption and oxidation processes can be studied through these changes . at room temperature , the formation of oxide layers on uranium and uranium - niobium alloys were found to occur rapidly upon exposure to oxygen , and the resultant oxide in each case was near - stoichiometric uo2 . due to formation of niobium oxide in uranium - niobium alloys , the diffusion of o ~ ( - ) ( o ~ ( 2 - ) ) and u ~ ( 4 + ) in the interface region was prevented , and the corrosion resistance of uranium - niobium alloys to oxygen is greatly enhanced by alloying with niobium
研究结果表明：清洁表面铌和铀的体等离子体振荡所造成的电子能量损失的实验值与理论计算值较为符合；随着氧化程度的加剧，表面等离子体( sp ) 、体等离子体( bp )以及价带电子跃迁所造成电子能量损失的谱峰发生了明显的连续偏移或强度的变化，这些变化可以用来分析铀及铀铌合金的初始氧化过程；室温下，铀及铀铌合金很容易与氧作用，最终结果，铀仅氧化为二氧化铀，另外，在铀铌合金氧化过程中，因为有铌的氧化物存在，不利于氧和铀在界面扩散，增强了铀铌合金抗氧化性能； eels能获得样品表面的信息比aes更为表面，更为灵敏，但由于eels的谱线过于集中，主要在几十ev以内，也有不容易区别和解谱的不足。 - A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements , the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers
表面光电压测试结果表明，复合材料中存在着强烈的从p -型酞菁材料到n -型氧化物半导体材料的光致电荷转移。而且tio _ 2的纳米管和线状结构提高了电子的传输效率最为明显，使光生电荷的分离得到显著改善。